Patterned Wafers

Copper CMP*

*Barrier materials: Ta, TaN, TiN; Electroplate thickness ranges: 7KA-15KA Cu

Mask SetProduct DescriptionWafer SizeMinimum Feature SizeTypical Etch DepthTypical Films Available
862Planarization distance mask containing openings of varying size for dishing measurements: 8000um down to 1um

Variable pitch line width structures also included

200 mmdishing structuresvarious· PETEOS
· SiN
· Silox
· Coral
· Black Diamond
831Damascene CMP test mask, including electrically testable serps, combs, VHORGs, VPD, & line width structures

Feature sizes extend down to 350nm

200 mm350 nm7KA· PETEOS
· SiN
· Silox
· Coral
· Black Diamond
854/455Damascene CMP test mask contains serpentine structures of varying CD, density/pitch.

Structures are electrically testable for quantitative measurement of dishing/erosion impact, have large arrays for profilometry/AFM, & are easily cleaveable for FIB/SEM imaging.

Feature size range: 180nm up to 100um

Design also contains a module with various dielectric slotting in large 100um metal lines for testing dishing vs. metal area.

200 mm
300 mm
180 nm5KA· PETEOS
· SiN
· Silox
· Coral
· Black Diamond
888854 design with added tiling, SRAM cells, logic cells, variable linewidth serpentines, metrology boxes, VHORGs, RVB/BTS structures for voltage or thermal breakdown, & others.200 mm160 nm4KA· PETEOS
· SiN
· Silox
· Coral
· Black
Diamond
454888 design extended down to 100nm feature size200 mm
300 mm
100 nm﹤3KA· PETEOS
· SiN
· Silox
· Coral
· Black
Diamond
Mask SetProduct DescriptionWafer SizeMinimum Feature SizeTypical Etch DepthTypical Films Available
864 / 464STI CMP mask, including vertical & horizontal trenches at varying density200 mm & 300mm500nm5KA
· polySi
· thermal oxide
· SiN
· TEOS or HDP oxide fill
474STI CMP mask containing pattern rec features, various trench densities at vertical & horizontal orientation, posts/holes, litho/etch monitor module, & iso/dense trench module

Feature sizes from 250nm up to 250um

200 mm & 300mm250 nm3KA
· polySi
· thermal oxide
· SiN
· TEOS or HDP oxide fill
484STI CMP mask designed with input from CMP & material suppliers

Includes enhanced metrology structures, various trench densities at vertical and horizontal orientation, isolated trench module, post/hole module, & SRAM test module

Feature sizes from 130nm up to 500um

200 mm
300 mm
130 nm2KA
· polySi
· thermal oxide
· SiN
· TEOS or HDP oxide fill
Mask SetProduct DescriptionWafer SizeMinimum Feature SizeTypical Etch DepthTypical Films Available
461Capacitance-voltage (CV dot) maskset

Electrically testable, 2-layer set; includes clearfield and darkfield masks

Dots 11um up to 3.5mm

200 mm & 300mmlarge capacitors﹤4KA
request
871Electrically testable, 4-layer set, includes CV structures with overlap/underlap, multidot, single & multigate mosfets, FG & UHF modules.200 mmlarge capacitors﹤10KA
request
800
Cu damascene 180nm-300nm maskset with two levels of metal, including dummyfill and passivation/pad layers; 6-layer set

Electrically testable via chains, combs/serps, VHORG, BTS, VDP, Kelvin via, electromigration, low k damage, CMP test arrays, & cleavable TEM & SEM structures.

Ball/wdge/flip chip bonding test structures with daisy chains to test bond reliability & slotted bondpads of various designs are included

200 mm180nm interconnect5KA· PETEOS
· SiN
· Silox
· Coral
· Black Diamond
400Cu damascene design similar to 800 maskset, extended down to 130nm200mm, 300mm130nm interconnect﹤4KA· PETEOS
· SiN
· Silox
· Coral
· Black Diamond
465Cu damascene design similar to 800 maskset, extended down to 90nm200mm, 300mm90nm interconnect﹤3KA
· PETEOS
· SiN
· Silox
· Coral
· Black Diamond
599MuGFET testchip includes NMOS/PMOS finFETs, capacitors, ring oscillators, poly/active contact chains, VDP, and Kelvins

Test cells are also inlcuded for SEM/TEM. Flows up to M3

200mm40nm fin / 85nm gaterequestrequest
898Front-end test maskset includes isolated NMOS/PMOS FETs, ring oscillators, ringFETs, VDP, serps, diodes, capacitors, contact chains, Kelvin contacts, inverters, via/CVD/poly/metal/radiation/plasma damage structures.

Test cells are also inlcuded for SEM/TEM/SIMS.

Feature sizes range from 85nm up to 500nm.

Maskset flows up to M1.

200mm85nm gaterequestrequest
Mask SetProduct DescriptionWafer SizeMinimum Feature SizeTypical Etch DepthTypical Films Available
AMAG4LMetrology pattern containing the following features: cleavable line/space from 50 to 1000nm, cleavable contacts from 150 to 1000nm, scatterometry structures, electrical LW structures, alignment targets and LER structures.200 mm & 300mm80nm L/S, 60nm isoLrequestrequest
AMAG5L Metrology pattern containing the following features: cleavable line/space from 30 to 250nm, cleavable contacts from 80 to 250nm, dummy fill patterns, line end shortening structures, alignment targets, scatterometry structures, phase imbalance structures and LER structures.200 mm & 300mm70nm L/S, 45nm isoLrequestrequest
OMAG4 Designed to characterize optical overlay measurements and for use in the development of new optical overlay techniques.200 mm
300 mm
100nm L/Srequestrequest
Mask SetProduct DescriptionWafer SizeMinimum Feature SizeTypical Etch DepthTypical Films Available
TSV193 TSV reticle field. Circular contact holes varying in diameter from 1 to 100um. Spacing includes 1:1, 1:2, 1:5 and ISO – both staggered and linear. Also includes structures with fixed spacing of 1um and 10um.200 mm1umSi
1XTSV
1X TSV mask. Circular contact holes varying in diameter from 1 to 100um. Spacing includes 1:1, 1:2, 1:5 and ISO – both staggered and linear. Also includes structures with fixed spacing of 1um and 10um. Note: Vias smaller than 5um are considered subnominal on this mask.
200 mm6umSi
Mask SetProduct DescriptionWafer SizeMinimum Feature SizeTypical Etch DepthTypical Films Available
Defect CalibrationNovati manufactures custom defect tool calibration wafers for many major equipment suppliers. Contact us for help in designing for your needs.200 mm & 300 mmrequestrequestrequest
Stage Movement CalibrationNovati manufactures custom stage calibration wafers for many major equipment suppliers. Contact us for help in designing for your needs.200 mm & 300 mmrequestrequestrequest
Optical Contrast CalibrationNovati manufactures custom designed wafers with high optical contrast for many major equipment suppliers. Contact us for help in designing for your needs.200 mm & 300 mmrequestrequestrequest
Mask SetProduct DescriptionWafer SizeMinimum Feature SizeTypical Etch DepthTypical Films Available
QCDCleavable line/space features from 100 to 2000nm with variable pitch. Electrically testable features are included. 200 mm & 300 mm100nmrequestrequest
QCECleavable contact features from 140 to 600nm with variable pitch.200 mm & 300 mm160nmrequestrequest
401Cleavable metrology pattern from 70nm to 500nm. Contains nine line/trench structures, nine electrically testable line width structures, six scatterometry structures, and eight VHorgs. 200 mm & 300 mm90nmrequestrequest
402Cleavable metrology pattern from 100nm to 250nm. Contains staggered VIA’s and scatterometry structures. 200 mm & 300 mm120nmrequestrequest
890This pattern is line/space consisting of 5 submicron linewidths at various pitch ratios. 200 mm140nmrequestrequest
892This pattern consists of submicron trenches and holes at various pitch ratios. 200 mm180nmrequestrequest
MEMS-RES1X resolution mask contains lines, spaces, vias and posts with variable pitch. Also includes fluidics structures and other representative MEMs patterns200 mm5umrequestrequest
Contact

Reuben SantanaSales Operations

512.356.2321 (phone) 512.356.2232 (fax)

Lesli RoushSales Operations

512.356.2322 (phone) 512.356.2232 (fax)

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